Open AccessPolarity Reversal of Tunnel Magnetoresistance Observed in Lateral Co-Al-Co Single-Electron Transistor
Author(s) -
Masashi Takiguchi,
Takayuki Sato,
Hiroshi Shimada,
Yoshinao Mizugaki
Publication year - 2014
Publication title -
proceedings of the 12th asia pacific physics conference (appc12)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.7566/jpscp.1.012004
Subject(s) - magnetoresistance , transistor , polarity (international relations) , condensed matter physics , coulomb blockade , materials science , tunnel magnetoresistance , electron , magnetoresistive random access memory , polarity reversal , random access memory , electrical engineering , optoelectronics , chemistry , physics , computer science , engineering , magnetic field , voltage , ferromagnetism , biochemistry , quantum mechanics , cell , computer hardware
Polarity reversal of tunnel magnetoresistance is a unique feature of double-tunnel-junction systems comprising a superconducting (SC) middle electrode sandwiched by two ferromagnetic (FM) outer electrodes. Yang et al. demonstrated a good agreement between experimental and theoretical tunnel magnetoresistance in vertically-stacked FM/SC/FM double tunnel junctions, in which the SC layer was 4.5-nm-thick Al. In this paper, we present the polarity reversal of tunnel magnetoresistance in Co-Al-Co double tunnel junctions, where two Co electrodes are laterally placed with spacing of 570 nm. The tunnel magnetoresistance is negative at the bias voltages near the SC gap voltage, whereas it is positive at higher bias voltages. The results demonstrate that the long spin lifetime in the SC Al electrode enables us to observe the spin accumulation even in the lateral structure.
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