A Real Time Model of Dynamic Thermal Response for 120kW IGBT Inverter
Author(s) -
Seokyeon Im,
Gangil Cha,
Sangseok Yu
Publication year - 2015
Publication title -
journal of hydrogen and new energy
Language(s) - English
Resource type - Journals
eISSN - 2288-7407
pISSN - 1738-7264
DOI - 10.7316/khnes.2015.26.2.184
Subject(s) - insulated gate bipolar transistor , inverter , thermal , computer science , electrical engineering , engineering , physics , voltage , meteorology
>> As the power electronics system increases the frequency, the power loss and thermal management are paid more attention. This research presents a real time model of dissipation power with junction temperature response for 120kw IGBT inverter which is applied to the thermal management of high power IGBT inverter.Since the computational time is critical for real time simulation, look-up tables of IGBT module characteristiccurve are implemented. The power loss from IGBT provides a clue to calculate the temperature of each module of IGBT. In this study, temperature of each layer in IGBT is predicted by lumped capacitance analysis of layerswith convective heat transfer. The power loss and temperature of layers in IGBT is then communicated due to mutual dependence. In the dynamic model, PWM pulses are employed to calculation real time IGBT and diode power loss. Under Matlab/Simulink ® environment, the dynamic model is validated with experiment. Results showedthat the dynamic response of power loss is closely coupled with effective thermal management. The convective heat transfer is enough to achieve proper thermal management under guideline temperature.
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