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This quarterly progress report, thirteenth of a series, describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include the disclosure of substantial differences in measurements of transistor delay time, a device characteristic frequently used as a screen in radiation hardness assurance tests, as measured with two different instruments; successful application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; specification of germanium for gamma-ray detectors; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

Methods of measurement for semiconductor materials, process control, and devices, quarterly report, October 1 to December 31, 1968.