Methods of measurement for semiconductor materials, process control, and devices.

: The report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Principal emphasis is placed on measurement of resistivity, carrier lifetime, and electrical inhomogeneities in semiconductor crystals; evaluation of wire bonds, metallization adhesion, and die attachment; and measurement of thermal properties of semiconductor devices and electrical properties of microwave devices. Work on related projects on silicon nuclear radiation detectors and specification of germanium for gamma-ray detectors is also described. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes. (Author)