Open AccessGate Leakage Current in GaN HEMT’s: A Degradation Modeling Approach
Author(s) -
Asmae Mimouni,
T. Fernández,
J. RodriguezTellez,
A. Tazón,
H. Baudrand,
M. Boussuis
Publication year - 2013
Publication title -
electrical and electronic engineering
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2162-9455
pISSN - 2162-8459
DOI - 10.5923/j.eee.20120206.09
Subject(s) - high electron mobility transistor , reliability (semiconductor) , degradation (telecommunications) , transistor , electronic engineering , optoelectronics , leakage (economics) , current (fluid) , materials science , reliability engineering , computer science , electrical engineering , engineering , physics , power (physics) , voltage , economics , macroeconomics , quantum mechanics