Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate

The scaling of simple gate transistors requires the scaling and transistor elements like source/drain junction became difficult to scale further after a limit due to adverse effect of electrostatic and short-channel performance. The solution of the problem is tri-gate where we can increase the performance without increasing the width and without scaling. In this paper we have described the parameter of tri-gate and taking the high dielectric as substrate. Index Terms—Tri-gate MOSFET; Radio frequency; HfO2; High dielectric constant; CMOS; VLSI.