Heterostructure Silicon and Germanium Alloy Based Thin Film Solar Cell Efficiency Analysis | Zendy

Ashish Kumar Singh | Zendy; Manish Kumar | Zendy; Dilip Kumar | Zendy; Simarpreet Singh | Zendy

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Heterostructure Silicon and Germanium Alloy Based Thin Film Solar Cell Efficiency Analysis

Author(s) -

Ashish Kumar Singh,

Manish Kumar,

Dilip Kumar,

Simarpreet Singh

Publication year - 2020

Publication title -

international journal of engineering and manufacturing

Language(s) - English

Resource type - Journals

eISSN - 2306-5982

pISSN - 2305-3631

DOI - 10.5815/ijem.2020.02.03

Subject(s) - solar cell , heterojunction , materials science , germanium , alloy , open circuit voltage , short circuit , optoelectronics , thin film , silicon , absorption (acoustics) , attenuation coefficient , current density , voltage , electrical engineering , optics , composite material , nanotechnology , engineering , physics , quantum mechanics

Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1−xGex heterojunction solar cell. The addition of Ge content to Si layer will affect the property of material. The research has investigated characteristics such as short circuit current density (Jsc), generation rate G , absorption coefficient (α), and open circuit voltage (Voc), power, fill factor (FF) with optimal Ge concentration. The speculative determination of appropriate germanium mole fraction is done to get the maximized thin-film solar cell efficiency.

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