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Silicon carbide (SiC) waveguides operating at the microwave range are presently being developed for advantageous use in high-temperature, high-voltage, high-power, high critical breakdown field and high-radiation conditions. SiC does not feel the impact of any acids or molten salts up to 800°C. Additionally SiC devices may be placed very close together, providing high device packing density for integrated circuits. SiC has superior properties for high-power electronic devices, compared to silicon. A change of technology from silicon to SiC will revolutionize the power electronics. Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on the wide bandgap semiconductor SiC. The fabrication of single mode SiC waveguides and the measurement of their propagation loss is reported in (Pandraud et al., 2007). There are not enough works proposing the investigations of SiC waveguides. We list here as an example some articles. The characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC were presented as a function of temperature and frequency in (Ponchak et al, 2004). An investigation of the SiC pressure transducer characteristics of microelectromechanical systems on temperature is given in (Okojie et al., 2006). The high-temperature pressure transducers like this are required to measure pressure fluctuations in the combustor chamber of jet and gas turbine engines. SiC waveguides have also successfully been used as the microwave absorbers (Zhang, 2006). The compelling system benefits of using SiC Schottky diodes, power MOSFETs, PiN diodes have resulted in rapid commercial adoption of this new technology by the power supply industry. The characteristics of SiC high temperature devices are reviewed in (Agarwal et al., 2006). Numerical studies of SiC waveguides are described in an extremely limited number of articles (Gric et al., 2010; Nickelson et al., 2009; Nickelson et al., 2008). The main difficulty faced by researchers in theoretical calculations of the SiC waveguides is large values of material losses and their dependence on the frequency and the temperature. We would like to draw your attention to the fact that we take the constitutive parameters of the SiC material from the experimental data of article (Baeraky, 2002) at certain temperatures. Then for the frequency dependence, we take into account through the dependence of the 6

Electrodynamical Modeling of Open Cylindrical and Rectangular Silicon Carbide Waveguides