Study of a Radical Doping Method for Large-area Two-dimensional Materials

Graphene has been studied owing its interesting properties. In particular, several studies have been conducted to replace transparent electrodes such as indium tin oxide. However, replacing graphene with transparent electrodes has been difficult due to problems such as high sheet resistance. In this study, we investigated a doping method using radicals with a mesh grid module in plasma to overcome this problem. With the proposed method, severe physical damage to graphene was not observed through Raman spectroscopy, and graphene films with a 52 % reduction rate in sheet resistance after doping were produced. Additionally, the reduction non-uniformity was determined using a 6-inch wafer and was found to be only ~2.25 %.