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Coincidence Doppler broadening and positron lifetime methods in positron annihilation spectroscopy has been used to analyze defect structures in metal, semiconductor and polycrystal, respectively. The S parameter and the lifetime (τ) value show that the defects were strongly related with vacancies. A positive relationship existed between the scanning electron microscope (SEM) images and the positron annihilation spectroscopy (PAS). According to the SEM images and PAS results, measurements of the defects with PAS indicate that it was more affected by the defect than the purity.

Positron Annihilation Study of Vacancy Type Defects in Ti, Si, and BaSrFBr:Eu