Positron Annihilation Study of Vacancy Type Defects in Ti, Si, and BaSrFBr:Eu | Zendy

Chong Lee | Zendy

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Positron Annihilation Study of Vacancy Type Defects in Ti, Si, and BaSrFBr:Eu

Author(s) -

Chong Lee

Publication year - 2016

Publication title -

applied science and convergence technology

Language(s) - English

Resource type - Journals

eISSN - 2288-6559

pISSN - 1225-8822

DOI - 10.5757/asct.2016.25.5.85

Subject(s) - doppler broadening , positron annihilation spectroscopy , positron annihilation , spectroscopy , positron , materials science , vacancy defect , positron lifetime spectroscopy , coincidence , scanning electron microscope , semiconductor , annihilation , atomic physics , electron , condensed matter physics , nuclear physics , physics , optoelectronics , spectral line , medicine , alternative medicine , pathology , quantum mechanics , astronomy , composite material

Coincidence Doppler broadening and positron lifetime methods in positron annihilation spectroscopy has been used to analyze defect structures in metal, semiconductor and polycrystal, respectively. The S parameter and the lifetime (τ) value show that the defects were strongly related with vacancies. A positive relationship existed between the scanning electron microscope (SEM) images and the positron annihilation spectroscopy (PAS). According to the SEM images and PAS results, measurements of the defects with PAS indicate that it was more affected by the defect than the purity.

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