Effect of Chlorine Plasma Treatment on Electronic Properties of GIZO Thin Film Grown on SiO2/Si Substrate | Zendy

Dahlang Tahir | Zendy; Suhk Kun Oh | Zendy; Hee Jae Kang | Zendy; Sung Heo | Zendy; Jae Gwan Chung | Zendy; Jae Cheol Lee | Zendy

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Effect of Chlorine Plasma Treatment on Electronic Properties of GIZO Thin Film Grown on SiO2/Si Substrate

Author(s) -

Dahlang Tahir,

Suhk Kun Oh,

Hee Jae Kang,

Sung Heo,

Jae Gwan Chung,

Jae Cheol Lee

Publication year - 2014

Publication title -

journal of mathematical and fundamental sciences

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.216

H-Index - 12

eISSN - 2337-5760

pISSN - 2338-5510

DOI - 10.5614/j.math.fund.sci.2013.45.3.1

Subject(s) - x ray photoelectron spectroscopy , analytical chemistry (journal) , chlorine , substrate (aquarium) , silicon , sputtering , spectroscopy , binding energy , materials science , sputter deposition , electron spectroscopy , thin film , chemistry , atomic physics , nuclear magnetic resonance , nanotechnology , metallurgy , physics , oceanography , quantum mechanics , geology , chromatography

The effect of chlorine plasma treatment on electron ic properties of GIZO grown on SiO2/Si by RF magnetron sputtering was investigated usi ng X- ray photoelectron spectroscopy (XPS), reflection el ectron energy loss spectroscopy (REELS), and secondary ion mass spectroscopy (SIMS). SIMS depth profiles indicated that the concentration of InO and ZnO on the surface was decreased after Cl 2 plasma treatment. REELS data showed that the band gap increased from 3.4 to 3.7 eV. XPS showed that Ind 5/2 and Zn2p 3/2 shifted to the higher binding energies by 0.5 eV and 0.3 eV, respe ctively. These phenomena were caused by oxygen deficiency and hydrocarbon contamination reduction as indicated by Cl atom bonding with In and Zn cations that are present on the surface after Cl 2 plasma treatment.

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