Development of Quantum Simulator for Emerging Nanoelectronics Devices | Zendy

Đinh Sỹ Hiền | Zendy

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Development of Quantum Simulator for Emerging Nanoelectronics Devices

Author(s) -

Đinh Sỹ Hiền

Publication year - 2012

Publication title -

isrn nanotechnology

Language(s) - English

Resource type - Journals

eISSN - 2090-6072

pISSN - 2090-6064

DOI - 10.5402/2012/617214

Subject(s) - nanoelectronics , transistor , quantum tunnelling , quantum , matlab , computer science , carbon nanotube field effect transistor , field effect transistor , physics , field (mathematics) , semiconductor device , voltage , electronic engineering , optoelectronics , nanotechnology , quantum mechanics , engineering , materials science , mathematics , layer (electronics) , pure mathematics , operating system

We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2.

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