Tunnel Magnetoresistance of Fe 3 O 4 /MgO/Fe Nanostructures
Author(s) -
S. G. Chigarev,
É. M. Épshteǐn,
И. В. Маликов,
Г. М. Михайлов,
P. E. Zilberman
Publication year - 2011
Publication title -
isrn condensed matter physics
Language(s) - English
Resource type - Journals
eISSN - 2090-7400
pISSN - 2090-7397
DOI - 10.5402/2011/826941
Subject(s) - magnetoresistance , tunnel magnetoresistance , condensed matter physics , magnetic field , magnetization , anisotropy , orientation (vector space) , field (mathematics) , geometry , materials science , physics , mathematics , ferromagnetism , quantum mechanics , pure mathematics
A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation isconsidered. The junction magnetic energy is analyzed as a function of the anglebetween the layer magnetization vectors under various magnetic fields. Thetunnel magnetoresistance is calculated as a function of the external magneticfield. In contrast with junctions with unidirectional anisotropy, asubstantially lower magnetic field is required for the junction switching.
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