Open AccessThreshold Voltage variation with respect to Gate geometry in Nano-scale MOSFETS
Author(s) -
Raja N. Mir
Publication year - 2019
Publication title -
zenodo (cern european organization for nuclear research)
Language(s) - English
DOI - 10.5281/zenodo.3530009
Subject(s) - nano , threshold voltage , nanoscopic scale , materials science , scale (ratio) , mosfet , variation (astronomy) , geometry , voltage , optoelectronics , engineering physics , electrical engineering , nanotechnology , physics , engineering , transistor , mathematics , quantum mechanics , composite material , astrophysics