Development of a CMOS SOI pixel detector | Zendy

Ishino, Hirokazu | Zendy; Arai, Y | Zendy; Hazumi, M | Zendy; Ikegami, Y | Zendy; Kohriki, T | Zendy; Tajima, O | Zendy; Terada, S | Zendy; Tsuboyama, T | Zendy; Unno, Y | Zendy; Ushiroda, Y | Zendy; Ikeda, H | Zendy; Hara, K | Zendy; Ishino, H | Zendy; Kawasaki, T | Zendy; Miyake, H | Zendy; Martin, E | Zendy; Varner, G | Zendy; Tajima, H | Zendy; Ohno, M | Zendy; Fukuda, K | Zendy; Komatsubara, H | Zendy; Ida, J | Zendy

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Development of a CMOS SOI pixel detector

Author(s) -

Ishino, Hirokazu,

Arai, Y,

Hazumi, M,

Ikegami, Y,

Kohriki, T,

Tajima, O,

Terada, S,

Tsuboyama, T,

Unno, Y,

Ushiroda, Y,

Ikeda, H,

Hara, K,

Ishino, H,

Kawasaki, T,

Miyake, H,

Martin, E,

Varner, G,

Tajima, H,

Ohno, M,

Fukuda, K,

Komatsubara, H,

Ida, J

Publication year - 2007

Language(s) - English

DOI - 10.5170/cern-2007-001.263

Subject(s) - detectors and experimental techniques

We have developed a monolithic radiation pixel detector using silicon on insulator (SOI) with a commercial 0.15 m fullydepleted- SOI technology and a Czochralski high resistivity silicon substrate in place of a handle wafer. The SOI TEG (Test Element Group) chips with a size of 2.5 x 2.5mm2 consisting of 20 x 20 um2 pixels have been designed and manufactured. Performance tests with a laser light illumination and a . ray radioactive source indicate successful operation of the detector. We also brie y discuss the back gate effect as well as the simulation study

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