Open AccessDesign Optimization and Performance Analysis of Inverter Circuit using DG-MOSFET at Sub 32nm
Author(s) -
Anita Nalawade,
Subha Subramaniam
Publication year - 2016
Publication title -
international journal of computer applications
Language(s) - English
Resource type - Journals
ISSN - 0975-8887
DOI - 10.5120/ijca2016911639
Subject(s) - computer science , inverter , mosfet , electrical engineering , voltage , transistor , engineering
In this paper, the design and performance of inverter circuit using Double gate MOSFET at 32nm Sub-micron CMOS technology has presented. The DG-MOSFET has a potential to overcome the problem of SCE. DG-MOSFET has been used for improvement in performance and reducing power dissipation. In this work, the propagation delay and dynamic power dissipation is observed for inverter circuit. Also the analysis of DG-MOSFET has been done using nanohub tool.
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