Transistor Width Size Effect on Voltage Drop and Improve Internal Resistance in CMOS Rectifier | Zendy

Himshikha Sharma | Zendy; Braj Bihari | Zendy

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Transistor Width Size Effect on Voltage Drop and Improve Internal Resistance in CMOS Rectifier

Author(s) -

Himshikha Sharma,

Braj Bihari

Publication year - 2016

Publication title -

international journal of computer applications

Language(s) - English

Resource type - Journals

ISSN - 0975-8887

DOI - 10.5120/ijca2016909440

Subject(s) - computer science , transistor , cmos , internal resistance , drop (telecommunication) , rectifier (neural networks) , voltage drop , voltage , electrical engineering , optoelectronics , materials science , telecommunications , physics , artificial intelligence , stochastic neural network , recurrent neural network , artificial neural network , engineering , power (physics) , battery (electricity) , quantum mechanics

The proposed work based on the simulation studies for the effect of different width size of transistor on output voltage drop and internal resistance in CMOS rectifier. This paper presents the CMOS rectifier by using two PMOS and NMOS configuration and gives information about miniaturization technology. Hence, increase the width size from 4μm to 1100μm of PMOS and NMOS transistors. The results for 1100μm are 1.20V is better than 750μm width size, and also minimize the internal resistance from 6.17Ω to 4.580Ω in CMOS rectifier. The model was designed and simulated using Microwind software and operated at a frequency of 50Hz with an AC voltage source. A circuit was fabricated with 0.35μm CMOS technology.

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