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Review on Performance of different Low Power SRAM Cell Structures
Author(s) -
Manish Shrivas,
Saima Ayyub,
Paresh Rawat
Publication year - 2015
Publication title -
international journal of computer applications
Language(s) - English
Resource type - Journals
ISSN - 0975-8887
DOI - 10.5120/ijca2015906350
Subject(s) - computer science , static random access memory , power (physics) , computer hardware , physics , quantum mechanics
Scaling in Silicon technology, usage of SRAM Cells has been increased to large extent while designing the embedded Cache and system on-chips in CMOS technology. Power consumption, packing density and the speed are the major factors of concern for designing a chip. The consumption of power and speed of SRAMs are some important issues among a number of factors that provides a solution which describes multiple designs that minimize the consumption of power and this review article is also based on that. This article presents the simulation of 6T, 9T, LP10T, ST10T and WRE8T SRAM cells. All the simulations have been carried out on 90nm at Microwind EDA tool. General Terms Low Power VLSI design

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