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Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve
Author(s) -
Viranjay M. Srivastava,
Ghanshyam Singh,
K. S. Yadav
Publication year - 2010
Publication title -
international journal of computer applications
Language(s) - English
Resource type - Journals
ISSN - 0975-8887
DOI - 10.5120/164-289
Subject(s) - computer science , software , operating system
For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 A (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.

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