Low-temperature crystallization of thin silicate layer on crystalline Fe dust | Zendy

Chihiro Kaito | Zendy; Akihito Kumamoto | Zendy; Yoshio Saito | Zendy; Ryoichi Ono | Zendy

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Low-temperature crystallization of thin silicate layer on crystalline Fe dust

Author(s) -

Chihiro Kaito,

Akihito Kumamoto,

Yoshio Saito,

Ryoichi Ono

Publication year - 2010

Publication title -

earth planets and space

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.835

H-Index - 74

eISSN - 1880-5981

pISSN - 1343-8832

DOI - 10.5047/eps.2008.10.002

Subject(s) - crystallite , materials science , crystallization , high resolution transmission electron microscopy , cristobalite , layer (electronics) , amorphous solid , silicon , silicate , crystal (programming language) , chemical engineering , surface layer , transmission electron microscopy , polycrystalline silicon , oxide , epitaxy , crystallography , mineralogy , nanotechnology , composite material , chemistry , metallurgy , thin film transistor , programming language , quartz , computer science , engineering

The crystallization of an amorphous SiO layer covering Fe crystal grains has been clarified by high-resolution transmission electron microscopic (HRTEM) observation. Cristobalite crystals were produced preferentially on the (110) surface of Fe particles by the oxidation of silicon crystallites in the SiO layer, i.e. the oxidation energy of the silicon crystallites resulted in the epitaxial growth of the oxide layer on the Fe surface. The chemical reaction energy due to the oxidation of silicon crystallites in the SiO layer was concentrated at the interface of the crystal and the amorphous layer. Crystal growth took place from the Fe grain surface.

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