Thermal Impact on the Power Device Behaviour: Application on the IGBT | Zendy

A. Hallouche | Zendy; A. TILMATNE | Zendy

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Thermal Impact on the Power Device Behaviour: Application on the IGBT

Author(s) -

A. Hallouche,

A. TILMATNE

Publication year - 2007

Publication title -

advances in electrical and computer engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.254

H-Index - 23

eISSN - 1844-7600

pISSN - 1582-7445

DOI - 10.4316/aece.2007.01002

Subject(s) - insulated gate bipolar transistor , power (physics) , thermal , electrical engineering , automotive engineering , computer science , materials science , engineering , voltage , physics , thermodynamics

The functional limits of an IGBT are defined by an essential parameter: the maximum junction temperature permitted. The technical specifications of each IGBT type provide the limit values of the functional temperature for example, from -55 C to 150 C. The electrical energy dissipated by the IGBT for any current direction, appears in form of thermal energy at the junctions level. But we should bear in mind that the ambient temperature represents an energetic level through which is insured the raise of the junction temperature

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