Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes | Zendy

Hogyoung Kim | Zendy

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Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Author(s) -

Hogyoung Kim

Publication year - 2016

Publication title -

transactions on electrical and electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.201

H-Index - 18

eISSN - 2092-7592

pISSN - 1229-7607

DOI - 10.4313/teem.2016.17.5.293

Subject(s) - materials science , schottky diode , capacitance , optoelectronics , diode , voltage , electrical engineering , electrode , chemistry , engineering

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/ n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

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