Open AccessElectrical Properties of a CuPc Field-Effect Transistor Using a UV/Ozone Treated and Untreated Substrate
Author(s) -
Ho-Shik Lee,
Min-Woo Cheon,
Yong-Pil Park
Publication year - 2011
Publication title -
transactions on electrical and electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.201
H-Index - 18
eISSN - 2092-7592
pISSN - 1229-7607
DOI - 10.4313/teem.2011.12.1.40
Subject(s) - materials science , organic field effect transistor , substrate (aquarium) , optoelectronics , transistor , field effect transistor , silicon , layer (electronics) , ozone , active layer , analytical chemistry (journal) , voltage , nanotechnology , thin film transistor , electrical engineering , organic chemistry , oceanography , chemistry , geology , engineering
An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 μm 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.
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