Effects of Growth Temperature on the Properties of ZnO Thin Films Grown by Radio-frequency Magnetron Sputtering | Zendy

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Effects of Growth Temperature on the Properties of ZnO Thin Films Grown by Radio-frequency Magnetron Sputtering

Author(s) -

Shinho Cho

Publication year - 2009

Publication title -

transactions on electrical and electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.201

H-Index - 18

eISSN - 2092-7592

pISSN - 1229-7607

DOI - 10.4313/teem.2009.10.6.185

Subject(s) - materials science , sputter deposition , electrical resistivity and conductivity , band gap , analytical chemistry (journal) , absorbance , thin film , scanning electron microscope , transmittance , diffraction , sputtering , ultraviolet , optoelectronics , optics , composite material , nanotechnology , chemistry , engineering , electrical engineering , physics , chromatography

(Received October 14 2009, Revised November 30 2009, Accepted December 15 2009) The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-400

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