Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser | Zendy

Mohammad Reza Farjadian | Zendy; Hassan Kaatuzian | Zendy; Iman Taghavi | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser

Author(s) -

Mohammad Reza Farjadian,

Hassan Kaatuzian,

Iman Taghavi

Publication year - 2013

Publication title -

optics and photonics journal

Language(s) - English

Resource type - Journals

eISSN - 2160-889X

pISSN - 2160-8881

DOI - 10.4236/opj.2013.32b058

Subject(s) - base (topology) , wavelength , materials science , transistor , laser , optics , optoelectronics , full width at half maximum , physics , mathematics , mathematical analysis , quantum mechanics , voltage

In this paper we investigate the effects of base width variation on performance of long wavelength transistor laser. In our structure with increasing the base width, the cut off frequency increases until 367 nm with 24.5 GHz and then abruptly fall. In 100 nm base width, we have 17.5 GHz cut off frequency, and overall ac performances become optimized, although, other parameters like optical losses and threshold current density are not optimized.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research