Effect of anneal temperature on electrical and optical properties of SnS:Ag thin films | Zendy

Hongjie Jia | Zendy; Shuying Cheng | Zendy; Xin-Kun Wu | Zendy; Yong-Li Yang | Zendy

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Effect of anneal temperature on electrical and optical properties of SnS:Ag thin films

Author(s) -

Hongjie Jia,

Shuying Cheng,

Xin-Kun Wu,

Yong-Li Yang

Publication year - 2010

Publication title -

natural science

Language(s) - English

Resource type - Journals

eISSN - 2150-4105

pISSN - 2150-4091

DOI - 10.4236/ns.2010.23030

Subject(s) - materials science , crystallite , annealing (glass) , electrical resistivity and conductivity , band gap , thin film , diffraction , vacuum evaporation , analytical chemistry (journal) , optoelectronics , optics , composite material , nanotechnology , metallurgy , chemistry , electrical engineering , physics , chromatography , engineering

SnS and Ag films were deposited on glass sub-strates by vacuum thermal evaporation tech-nique successively, and then the films were annealed at different temperatures (0-300℃) in N2 atmosphere for 2h in order to obtain sil-ver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal struc-ture, and the crystallites in the films were ex-clusively oriented along the111direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their re-sistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260℃, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier con-centration was up to 1.132 × 1017 cm-3, and the resistivity was about 3.1 Ωcm

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