Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation | Zendy

Tetsuji Arai | Zendy; Kazuki Kamimura | Zendy; Chiaya Yamamoto | Zendy; Mai Shirakura | Zendy; Keisuke Arimoto | Zendy; Junji Yamanaka | Zendy; Kiyokazu Nakagawa | Zendy; Toshiyuki Takamatsu | Zendy; Masaaki Ogino | Zendy; Masaaki Tachioka | Zendy; Haruo Nakazawa | Zendy

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Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation

Author(s) -

Tetsuji Arai,

Kazuki Kamimura,

Chiaya Yamamoto,

Mai Shirakura,

Keisuke Arimoto,

Junji Yamanaka,

Kiyokazu Nakagawa,

Toshiyuki Takamatsu,

Masaaki Ogino,

Masaaki Tachioka,

Haruo Nakazawa

Publication year - 2017

Publication title -

journal of materials science and chemical engineering

Language(s) - English

Resource type - Journals

eISSN - 2327-6053

pISSN - 2327-6045

DOI - 10.4236/msce.2017.51005

Subject(s) - materials science , ohmic contact , irradiation , substrate (aquarium) , hydrogen , optoelectronics , composite material , organic chemistry , oceanography , physics , chemistry , layer (electronics) , nuclear physics , geology

We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.

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