Open AccessDoping engineering to increase the material yield during crystallization of B and P compensated silicon
Author(s) -
Maxime Forster,
Erwann Fourmond,
Roland Einhaus,
H. Lauvray,
J. Kraiem,
M. Lemiti,
Apollon Solar,
J. Capelle
Publication year - 2010
Publication title -
hal (le centre pour la communication scientifique directe)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.4229/25theupvsec2010-2bo.3.2
Subject(s) - ingot , materials science , silicon , doping , boron , gallium , crystallization , carrier lifetime , impurity , optoelectronics , chemical engineering , metallurgy , chemistry , engineering , organic chemistry , alloy
International audienceIn this paper, we investigate gallium co-doping during crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p-type ingot with high resistivity despite high B and P contents in the silicon melt. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier mobility measurements indicate that this material is suitable for the realization of solar cells with comparable efficiencies to standard material. Significant light-induced degradation of minority carrier lifetime is however revealed to occur in this material as in standard boron-doped silicon