Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption | Zendy

L.M. Gassa | Zendy; A.M. Castro Luna | Zendy; R M Torres-Sánchez | Zendy; J.O. Zerbino | Zendy

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Cuprous Oxide Layers Grown on Copper: Effect of CO Adsorption

Author(s) -

L.M. Gassa,

A.M. Castro Luna,

R M Torres-Sánchez,

J.O. Zerbino

Publication year - 2004

Publication title -

portugaliae electrochimica acta

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.252

H-Index - 27

eISSN - 1647-1571

pISSN - 0872-1904

DOI - 10.4152/pea.200402081

Subject(s) - adsorption , copper , oxide , materials science , copper oxide , layer (electronics) , chemical engineering , inorganic chemistry , metallurgy , chemistry , composite material , engineering

The semiconducting properties of anodic passive films formed on polycrystalline copper in aqueous borax solutions, pH 9.2, are studied using electrochemical impedance spectroscopy (EIS) and voltammetry. The semiconducting nature of the cuprous passive layer is analysed in the potential region near de rest potential as a function of the electrode potential and the presence of CO dissolved in the electrolyte. The oxide formation is explained as a sequence of Cu2O growth, cation adsorption, Cu(II), and dissolution steps similarly to previous reported investigations for the metal in CO free solutions. The different growth conditions change the defect or excess of cations accumulated in the outer side of the cuprous layer/electrolyte interface leading to different semiconducting properties.

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