High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors
Author(s) -
Robert S. Okojie,
Roger D. Meredith,
Clarence T. Chang,
Ender Savrun
Publication year - 2014
Publication title -
additional conferences (device packaging hitec hiten and cicmt)
Language(s) - English
Resource type - Journals
ISSN - 2380-4491
DOI - 10.4071/hitec-ta25
Subject(s) - combustor , materials science , silicon carbide , acoustics , pressure sensor , transducer , pressure measurement , sensitivity (control systems) , amplitude , temperature measurement , noise (video) , mechanical engineering , composite material , electronic engineering , optics , combustion , engineering , computer science , physics , chemistry , image (mathematics) , organic chemistry , quantum mechanics , artificial intelligence
Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 °C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 °C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom