Ultra High 3D Capacitors Values with High Volume Efficiency and Outstanding Stability | Zendy

Catherine Bunel | Zendy; Franck Murray | Zendy

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Ultra High 3D Capacitors Values with High Volume Efficiency and Outstanding Stability

Author(s) -

Catherine Bunel,

Franck Murray

Publication year - 2012

Publication title -

additional conferences (device packaging hitec hiten and cicmt)

Language(s) - English

Resource type - Journals

ISSN - 2380-4491

DOI - 10.4071/2012dpc-tp41

Subject(s) - capacitor , capacitance , reliability (semiconductor) , materials science , stacking , volume (thermodynamics) , key (lock) , three dimensional integrated circuit , through silicon via , range (aeronautics) , electrical engineering , engineering physics , computer science , optoelectronics , silicon , integrated circuit , engineering , composite material , physics , voltage , power (physics) , electrode , nuclear magnetic resonance , quantum mechanics , computer security

IPDIA's primary effort is to develop innovative 3D technologies to integrate Passive Devices .One of their key technology drivers is the trench high-density capacitor. After introducing the 250nF/mm2 in mass production, it's now the turn to launch outstanding performances with a new worldwide record of 550nF/mm2. With the advanced packaging solutions using very thin dies stacking ,combining a high level of capacitance integration and high volumetric efficiency, this achievement will enable to extend the range of high reliability Silicon Capacitor values up to 10 μF in a package size 3.4mm*2.4mm*1.4mm and even smaller . This paper will provide the details to prove that the former ambitious target of 2 μF/mm3 is now close to reality.

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