Diffusivity of Point Defects in the Passive Film on Stainless Steel | Zendy

Arash Fattahalhosseini | Zendy; M. H. Alemi | Zendy; S. Banaei | Zendy

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Diffusivity of Point Defects in the Passive Film on Stainless Steel

Author(s) -

Arash Fattahalhosseini,

M. H. Alemi,

S. Banaei

Publication year - 2011

Publication title -

international journal of electrochemistry

Language(s) - English

Resource type - Journals

eISSN - 2090-3537

pISSN - 2090-3529

DOI - 10.4061/2011/968512

Subject(s) - materials science , schottky diode , thermal diffusivity , diffusion , semiconductor , metallurgy , analytical chemistry (journal) , optoelectronics , thermodynamics , chemistry , physics , diode , chromatography

The semiconductor properties of passive films formed on AISI 316 stainless steel in sulfuric acid solution were studied by employing Mott-Schottky analysis in conjunction with the point defect model. The donor density of the passive films, which can be estimated by the Mott-Schottky plots, changes depending on the film formation potentials. Based on the Mott-Schottky analysis, an exponential relationship between donor density and the film formation potentials of the passive films was developed. The results showed that the donor densities evaluated from Mott-Schottky plots are in the range 2-3 × 1021 cm−3 and decreased with the film formation potential. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficient of the donors, (), is calculated to be approximately 3.12 × 10−16 cm2/s

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