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Oxide heterostructures present a tremendous opportunity for realizing new artificial electronic phases through controlled synthetic routes. Taking advantage of these opportunities raises challenges for theory, for synthesis, and for measurements. Note that the physical phenomena occurring at oxide interfaces will be significantly different from those of bulk materials. Most world-leading groups are making efforts to discover novel electron phases in artificial oxide interfaces by varying parameters such as the charge transfer, the orbital and electronic reconstructions, the strain, and dimensionality control. In addition, we propose to perform more creative research by including three other control parameters: the spin-orbit coupling, the strain gradient, and defect control.

Study of New Functional Oxide Interfaces Fabricated by Using Atomic Scale Control Epitaxy