Physics and Technological Overview of III-V Nitride Semiconductor Based Light-emitting Diodes | Zendy

EunKyung Suh | Zendy; Chang-Hee Hong | Zendy; Hyun Soo Kim | Zendy; Jaehee Cho | Zendy

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Physics and Technological Overview of III-V Nitride Semiconductor Based Light-emitting Diodes

Author(s) -

EunKyung Suh,

Chang-Hee Hong,

Hyun Soo Kim,

Jaehee Cho

Publication year - 2014

Publication title -

physics and high technology

Language(s) - English

Resource type - Journals

ISSN - 1225-2336

DOI - 10.3938/phit.23.051

Subject(s) - optoelectronics , semiconductor , light emitting diode , physics , engineering physics , nitride , diode , materials science , nanotechnology , layer (electronics)

Development of high-power, high-efficiency blue light-emitting diodes (LED) based on III-V nitride semiconductor heterostructures has led to the era of solid-state lighting and technology convergence between photonics and various fields such as information and communication, agriculture, biology, and medicine. In this article, recent achievements and progress in the field of the III-nitride material system and its optoelectronic applications especially for high-power, high-efficiency short-wavelength LEDs are presented and reviewed. Major technical issues yet to be solved are also discussed as a means to recognize future technological trends and research activities.

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