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STM Studies of Transport Properties of Topological Insulators
Author(s) -
DooHee Cho,
Minseong Kim,
InWhan Lyo
Publication year - 2011
Publication title -
physics and high technology
Language(s) - English
Resource type - Journals
ISSN - 1225-2336
DOI - 10.3938/phit.20.009
Subject(s) - topological insulator , topology (electrical circuits) , physics , condensed matter physics , engineering , electrical engineering
Strong spin-orbit coupling (SOC) can induce a novel insulating state (topological insulators or TIs) with metallic surface states that have a linear band dispersion of massless Dirac Fermions with spin-helicity. Quasi-particle interference (QPI) patterns from scanning tunneling microscopy and spectroscopy reveal that electrons in the surface states are spin-textured. A consequence is that back-scattering of a surface electron by non-magnetic impurities is strongly suppressed as predicted by the spin selection rule. In addition, the band dispersion of the non-trivial surface states obtained from dI/dV spectra in a magnetic field coincides with ARPES results. These results suggest that TIs can provide fertile grounds to study electron-spin interactions at the nano-scale as magnetic impurities enable spin-flip back-scattering and open up gaps by destroying the time-reversal symmetry.

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