Processing of germanium for integrated circuits | Zendy

Ray Duffy | Zendy; Maryam Shayesteh | Zendy; Ran Yu | Zendy

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Processing of germanium for integrated circuits

Author(s) -

Ray Duffy,

Maryam Shayesteh,

Ran Yu

Publication year - 2014

Publication title -

turkish journal of physics

Language(s) - English

Resource type - Journals

eISSN - 1303-6122

pISSN - 1300-0101

DOI - 10.3906/fiz-1405-2

Subject(s) - integrated circuit , electronic circuit , key (lock) , computer science , transistor , germanium , focus (optics) , field (mathematics) , field effect transistor , electronic engineering , engineering physics , electrical engineering , materials science , optoelectronics , silicon , engineering , physics , mathematics , operating system , computer security , optics , voltage , pure mathematics

In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge eld-eect-transis tor devices, and consider how modelling

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