A 2-D analytical model for cylindrical gate tunnel FET (CG-TFET) based on center potential | Zendy

Sidhartha Dash | Zendy; Guru Prasad Mishra | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

A 2-D analytical model for cylindrical gate tunnel FET (CG-TFET) based on center potential

Author(s) -

Sidhartha Dash,

Guru Prasad Mishra

Publication year - 2017

Publication title -

turkish journal of electrical engineering and computer sciences

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.225

H-Index - 30

eISSN - 1303-6203

pISSN - 1300-0632

DOI - 10.3906/elk-1502-74

Subject(s) - quantum tunnelling , laplace transform , laplace's equation , scaling , point (geometry) , center (category theory) , engineering , electronic engineering , optoelectronics , electrical engineering , physics , chemistry , mathematics , mathematical analysis , quantum mechanics , geometry , boundary value problem , crystallography

In this paper, a 2-D cylindrical gate tunnel FET (CG-TFET) model is developed based on the potential at the center of cylinder. The center potential is obtained by Laplace solution in the cylindrical coordinate system and the accuracy is validated using a 2-D TCAD device simulator. The tunneling of charge carriers in the CG-TFET is analyzed using the center potential and the results are compared to the surface potential-based model. The drain current is formulated using the initial tunneling point and tunneling path, which further helps to obtain the threshold voltage of this model. The effect of gate engineering and band-gap engineering on the drain current are investigated. The device scaling capability of the model is discussed extensively.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research