Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope | Zendy

Е. Hieckmann | Zendy; Markus Nacke | Zendy; Matthias Allardt | Zendy; Yury Bodrov | Zendy; Paul Chekhonin | Zendy; Werner Skrotzki | Zendy; Jörg Weber | Zendy

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Author(s) -

Е. Hieckmann,

Markus Nacke,

Matthias Allardt,

Yury Bodrov,

Paul Chekhonin,

Werner Skrotzki,

Jörg Weber

Publication year - 2016

Publication title -

journal of visualized experiments

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.596

H-Index - 91

ISSN - 1940-087X

DOI - 10.3791/53872-v

Subject(s) - cathodoluminescence , materials science , electron beam induced current , semiconductor , scanning electron microscope , crystallographic defect , silicon , non radiative recombination , electron , dislocation , optoelectronics , characterization (materials science) , scanning transmission electron microscopy , carrier lifetime , luminescence , optics , condensed matter physics , nanotechnology , physics , semiconductor materials , composite material , quantum mechanics

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