Surface roughness and residual stress evolution in SiNx/ SiO2 multilayer coatings deposited by reactive pulsed magnetron sputtering | Zendy

ChuenLin Tien | Zendy; Po-Wei Lee | Zendy; Shih-Chin Lin | Zendy; Hong-Yi Lin | Zendy

Open Access

Surface roughness and residual stress evolution in SiNx/ SiO2 multilayer coatings deposited by reactive pulsed magnetron sputtering

Author(s) -

ChuenLin Tien,

Po-Wei Lee,

Shih-Chin Lin,

Hong-Yi Lin

Publication year - 2021

Publication title -

optica applicata

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.204

H-Index - 28

eISSN - 1899-7015

pISSN - 0078-5466

DOI - 10.37190/oa210206

Subject(s) - materials science , residual stress , composite material , surface roughness , cavity magnetron , thin film , stack (abstract data type) , sputter deposition , layer (electronics) , surface finish , dielectric , sputtering , stress (linguistics) , optoelectronics , nanotechnology , linguistics , philosophy , computer science , programming language

The surface roughness and residual stress behavior in two types of SiN x /SiO 2 dielectric quarter-wave stacks was investigated experimentally. A reactive pulsed magnetron sputtering system was used to prepare the SiN x /SiO 2 multilayer thin films. The results show that SiN x /SiO 2 quarter-wave stack with a buffer layer of MgF 2 thin film can reduce the residual stress. The effect of aging on the residual stress in two quarter-wave stacks was also studied. We found that the residual stresses in both SiN x /SiO 2 multilayer coatings are changed from a compressive state to a tensile stress state with increasing the aging time. The root mean square (RMS) surface roughness of MgF 2 /(SiN x /SiO 2 ) 22 and (SiN x /SiO 2 ) 22 quarter-wave stacks are 2.23 ± 0.22 nm and 2.08 ± 0.20 nm, respectively.

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