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This study presents vertical Ga 2 O 3  Schottky barrier diodes (SBDs) with a staircase field plate on a deep trench filled with SiO 2 . It was clarified from device simulation that at high reverse voltage operation, the staircase field plate and the deep trench can effectively alleviate electric field concentration in the Ga 2 O 3  drift layer and the SiO 2  layer, respectively. The Ga 2 O 3  SBDs successfully demonstrated superior device characteristics typified by an on-resistance of 7.6 mΩ cm 2  and an off-state breakdown voltage of 1.66 kV. These results offer the availability of the trench staircase field plate as an edge termination structure for the development of Ga 2 O 3  SBDs.

Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate

Vertical β-Ga₂O₃ Schottky barrier diodes with trench staircase field plate