Open AccessVertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate
Author(s) -
Sandeep Kumar,
Hisashi Murakami,
Yoshinao Kumagai,
Masataka Higashiwaki
Publication year - 2022
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ac620b
Subject(s) - trench , schottky diode , schottky barrier , materials science , diode , optoelectronics , electric field , enhanced data rates for gsm evolution , layer (electronics) , breakdown voltage , field (mathematics) , voltage , electrical engineering , composite material , physics , engineering , telecommunications , quantum mechanics , mathematics , pure mathematics
This study presents vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with a staircase field plate on a deep trench filled with SiO 2 . It was clarified from device simulation that at high reverse voltage operation, the staircase field plate and the deep trench can effectively alleviate electric field concentration in the Ga 2 O 3 drift layer and the SiO 2 layer, respectively. The Ga 2 O 3 SBDs successfully demonstrated superior device characteristics typified by an on-resistance of 7.6 mΩ cm 2 and an off-state breakdown voltage of 1.66 kV. These results offer the availability of the trench staircase field plate as an edge termination structure for the development of Ga 2 O 3 SBDs.
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