Open AccessFreestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping
Author(s) -
Rami Mantach,
P. Vennéguès,
J. Zúñiga–Pérez,
P. de Mierry,
Marc Portail,
G. Feuillet
Publication year - 2020
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/abc1cd
Subject(s) - materials science , dislocation , trapping , silicon on insulator , insulator (electricity) , optoelectronics , facet (psychology) , hexagonal crystal system , silicon , crystallography , composite material , chemistry , psychology , ecology , social psychology , personality , big five personality traits , biology
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