Open AccessHigh-NA EUV lithography: current status and outlook for the future
Author(s) -
Harry Levinson
Publication year - 2022
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ac49fa
Subject(s) - extreme ultraviolet lithography , lithography , optics , flatness (cosmology) , photolithography , extreme ultraviolet , numerical aperture , image stitching , immersion lithography , wafer , next generation lithography , resist , materials science , fabrication , metrology , optoelectronics , physics , nanotechnology , electron beam lithography , laser , pathology , medicine , wavelength , alternative medicine , quantum mechanics , layer (electronics) , cosmology
High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses with such high NA will have very small depths-of-focus, which will require improved focus systems and significant improvements in wafer flatness during processing. Lenses are anamorphic to address mask 3D issues, which results in wafer field sizes of 26 mm × 16.5 mm, half that of lower NA EUV tools and optical scanners. Production of large die will require stitching. Computational infrastructure is being created to support high-NA lithography, including simulators that use Tatian polynomials to characterize the aberrations of lenses with central obscurations. High resolution resists that meet the line-edge roughness and defect requirements for high-volume manufacturing also need to be developed. High power light sources will also be needed to limit photon shot noise.
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