Open AccessEffects of Zn x Mn1−x S buffer layer on nonpolar AlN growth on Si (100) substrate
Author(s) -
Masaya Morita,
Keiji Ishibashi,
Kenichiro Takahashi,
Toyohiro Chikyow,
Atsushi Ogura,
Takahiro Nagata
Publication year - 2021
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/abf07a
Subject(s) - x ray photoelectron spectroscopy , sputtering , substrate (aquarium) , materials science , analytical chemistry (journal) , layer (electronics) , lattice constant , metastability , thermal stability , thin film , phase (matter) , crystallography , solubility , chemistry , chemical engineering , nanotechnology , optics , chromatography , oceanography , physics , organic chemistry , geology , diffraction , engineering
Thin film growth of Zn x Mn 1− x S on a Si (100) substrate by sputtering was investigated for nonpolar AlN film growth on Si (100) substrate. The Zn x Mn 1− x S buffer layer reduces the large differences in thermal expansion coefficient and lattice constants between AlN and Si. Although the solubility of ZnS in MnS is less than 5% at 800 °C in bulk form, the insertion of a room-temperature MnS layer between Zn x Mn 1− x S and Si enabled (100)-oriented cubic-Zn x Mn 1− x S film growth even at x = 9.5%, which is a metastable phase and a phase separation region in bulk form. On the (100)-oriented cubic Zn x Mn 1− x S film, nonpolar AlN growth was achieved by sputtering. Furthermore, X-ray photoelectron spectroscopy measurements revealed that the Zn x Mn 1− x S film improved the stability of the AlN/Zn x Mn 1− x S interface. Zn x Mn 1− x S has the potential to enable nonpolar AlN growth on large-diameter Si (100) substrates.
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