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N-Type Mg 3 Sb 2- x Bi x Alloys as Promising Thermoelectric Materials
Author(s) -
Hongjing Shang,
Zhongxin Liang,
Congcong Xu,
Jun Mao,
Hongwei Gu,
Fazhu Ding,
Zhifeng Ren
Publication year - 2020
Publication title -
research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.8
H-Index - 16
ISSN - 2639-5274
DOI - 10.34133/2020/1219461
Subject(s) - thermoelectric effect , scattering , materials science , impurity , seebeck coefficient , carrier scattering , thermoelectric materials , figure of merit , electron mobility , grain boundary , charge carrier , analytical chemistry (journal) , condensed matter physics , thermodynamics , optoelectronics , metallurgy , physics , chemistry , optics , microstructure , chromatography , quantum mechanics
N-type Mg 3 Sb 2- x Bi x alloys have been extensively studied in recent years due to their significantly enhanced thermoelectric figure of merit ( zT ), thus promoting them as potential candidates for waste heat recovery and cooling applications. In this review, the effects resulting from alloying Mg 3 Bi 2 with Mg 3 Sb 2 , including narrowed bandgap, decreased effective mass, and increased carrier mobility, are summarized. Subsequently, defect-controlled electrical properties in n-type Mg 3 Sb 2- x Bi x are revealed. On one hand, manipulation of intrinsic and extrinsic defects can achieve optimal carrier concentration. On the other hand, Mg vacancies dominate carrier-scattering mechanisms (ionized impurity scattering and grain boundary scattering). Both aspects are discussed for Mg 3 Sb 2- x Bi x thermoelectric materials. Finally, we review the present status of, and future outlook for, these materials in power generation and cooling applications.

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