Open AccessAssessment of overetch and polysilicon film properties through on-chip tests
Author(s) -
Ramin Mirzazadeh,
Aldo Ghisi,
Stefano Mariani
Publication year - 2015
Language(s) - English
Resource type - Conference proceedings
DOI - 10.3390/ecsa-2-s1001
Subject(s) - microelectromechanical systems , materials science , silicon , fabrication , deep reactive ion etching , chip , polysilicon depletion effect , grain size , optoelectronics , miniaturization , etching (microfabrication) , electronic engineering , composite material , reactive ion etching , nanotechnology , electrical engineering , engineering , medicine , alternative medicine , pathology , layer (electronics) , transistor , voltage , gate oxide
Due to the increasing demand of miniaturization of MEMS devices, the\udcharacteristic size (e.g. the width) of some mechanical components may become\udcomparable to that of a silicon grain. Therefore, the relevant effective mechanical\udproperties can vary significantly from one device to another. In this work, through on-chip\udtests we investigate the behavior of polysilicon films using standard electrostatic\udactuation/sensing. The outcomes of the experimental campaign are then compared to those\udobtained with an analytical reduced-order model of the moving structure, and to coupled\udelectro-mechanical simulations accounting for the polycrystalline morphology of the\udsilicon film. These two models are adopted to bilaterally bound the experimental data up to\udpull-in, and to assess the scattering induced by the random orientation of the crystal lattice\udof each grain in slender parts of the devices