Pressure and Temperature Dependence of Energy Gap in SiC and Si1-xGex | Zendy

Adnan M. Al-Sheikh | Zendy; Mumtaz M. Hussien | Zendy; Siham Sabah Abdullah | Zendy

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Pressure and Temperature Dependence of Energy Gap in SiC and Si1-xGex

Author(s) -

Adnan M. Al-Sheikh,

Mumtaz M. Hussien,

Siham Sabah Abdullah

Publication year - 2019

Publication title -

mağallaẗ ʻulūm al-rāfidayn

Language(s) - English

Resource type - Journals

eISSN - 2664-2786

pISSN - 1608-9391

DOI - 10.33899/rjs.2019.163296

Subject(s) - equation of state , condensed matter physics , alloy , materials science , interpretation (philosophy) , ambiguity , band gap , high pressure , thermodynamics , chemistry , physics , metallurgy , linguistics , philosophy , computer science , programming language

The effect of pressure on energy gap for IV-IV compound SiC and Si1-xGex alloy have been investigated and evaluated by using Birch-Murnaghan equation of state (EOS) and Bardeen equation of state. Ambiguity in the effect of pressure and temperature on Eg of different SiC polytypes (3C, 4H, 6H) have been investigated and attributed. Variation of Eg in Si1-x Gex evaluated and an interpretation, for it, has been suggested.

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