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In this work ZnO0.95Mg0.05/Si hetrojunction detector was fabricated using chemical spray pyrolysis (CSP) method. The thin films were deposited on n-type silicon using Zn(NO3)2.6H2O, for molarity (0.2 M) and substrate temperature 673 K. The carrier gas is Nitrogen. The electrical properties, voltage and short circuit current are calculated. Ideal factor was 1.8, quantum efficiency was about 65.55% at wavelength 859 nm with a value of specific defectively of (0.9110 12 cm.HZ 1/2 .W -1 ). The maximum spectra responsively was 0.4 A/w. The calculated rise time of the detector was found to be around 50 ns.

Fabrication of Hetrojunction Detector ZnO0.95Mg0.05/Si Using Chemical Spray Pyrolysis Method and Studying Electrical Characteristics