The Optical and Electrical Properties of CdSe Thin Films Prepared by CBD Technique | Zendy

Nawfal Y. Jamil | Zendy; Marwa T. Mahmood | Zendy; Noor A. Mustafa | Zendy

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The Optical and Electrical Properties of CdSe Thin Films Prepared by CBD Technique

Author(s) -

Nawfal Y. Jamil,

Marwa T. Mahmood,

Noor A. Mustafa

Publication year - 2012

Publication title -

mağallaẗ ʻulūm al-rāfidayn

Language(s) - English

Resource type - Journals

eISSN - 2664-2786

pISSN - 1608-9391

DOI - 10.33899/rjs.2012.29447

Subject(s) - annealing (glass) , materials science , band gap , thin film , chemical bath deposition , transmittance , substrate (aquarium) , optoelectronics , deposition (geology) , analytical chemistry (journal) , nanotechnology , chemistry , composite material , organic chemistry , paleontology , oceanography , sediment , geology , biology

In this work thin films of CdSe were deposited on glass substrate by chemical bath deposition technique at different deposition temperatures 298, 318, and 328 K. The effects of deposition temperature on the optical properties have been studied as well as the effect of annealing at different temperatures (373, 473, 573 and 673 K) for one hour. The optical properties of CdSe were studied from transmittance measurements as a function of a range of wave lengths (320-1000 nm). Optical band gap has been decreased from 2 to 1.7 eV after annealing. CdSe/p-Si was prepared by depositing CdSe film on the p-type Si substrate. The IV characteristics showed a diode behavior.

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