New Analysis to Measure the Capacitance and Conductance of MOS Structure | Zendy

Luqman Ali | Zendy; Wagah F. Mohamad | Zendy

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New Analysis to Measure the Capacitance and Conductance of MOS Structure

Author(s) -

Luqman Ali,

Wagah F. Mohamad

Publication year - 2006

Publication title -

maǧallaẗ al-handasaẗ al-rāfidayn

Language(s) - English

Resource type - Journals

eISSN - 2220-1270

pISSN - 1813-0526

DOI - 10.33899/rengj.2006.46241

Subject(s) - capacitance , conductance , resistive touchscreen , resistor , materials science , shunt (medical) , measure (data warehouse) , electrical engineering , matlab , network structure , thin film , dielectric , optoelectronics , electronic engineering , analytical chemistry (journal) , computer science , nanotechnology , voltage , chemistry , physics , condensed matter physics , engineering , data mining , electrode , medicine , chromatography , machine learning , cardiology , operating system

In this research thin film layers have been prepared at alternate layers of resistive and dielectric deposited on appropriate substrates to form four – terminal RY-NR network. If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of analysis has been proposed to measure the shunt capacitance and the shunt conductance of certain MOS samples. Matlab program has been used to compute shunt capacitance and shunt conductance at different frequencies. The results computed by this method have been compared with the results obtained by LCR meter method and showed perfect coincident with each other.

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