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The three-level nano particles are doped in dual micro ring resonators of the proposed all-optical memory unit cell as the active gain segment in which the optical power loss is compensated due to the effect of lasing without inversion in doped quantum dots. The effect of parameters such as pumping rate and density of doped QDs are investigated. The optical integrator generates an optical step function to save input data. Also, the effect of electromagnetically induced transparency in three-level quantum dots is investigated as an on/off phase shifter for data reading at requested time. Both input data into the memory and output read pulse are return -to-zero Gaussian signals, but the output data has narrower pulse width. This is because of that the light in the integrator is mostly erased during the rising edge of the phase shift pulse. The proposed integrated memory cell can operate in high speed situations.

Absorption Less All-Optical Memory Cell Based on Active Micro Ring Optical Integrators